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BTS409L1
Smart Highside Power Switch
* Overload protection * Current limitation * Short circuit protection * Thermal shutdown * Overvoltage protection (including load dump) * Fast demagnetization of inductive loads * Reverse battery protection1) * Undervoltage and overvoltage shutdown with auto-restart and hysteresis * Open drain diagnostic output * Open load detection in ON-state * CMOS compatible input * Loss of ground and loss of Vbb protection * Electrostatic discharge (ESD) protection
Features
Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation
Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr)
43 V 5.0 ... 34 V 200 m 2.3 A 4 A
TO-220AB/5
5
1 Straight leads
5
1 5
Application
Standard
SMD
* C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads * All types of resistive, inductive and capacitve loads * Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
+ V bb
3
Voltag source V Logic Voltag sensor
Overvoltag protectio
Curren limit
Gate protectio
OUT
Charge Level f Rectifier
Limit for unclampe ind. Open Short to detectio
2
IN
Temperatur sensor
5
ESD
Logic
Load
R
4
ST
O
GND
PROFET
GND
1
Signal GND Load GND
1)
With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load.
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BTS409L1
Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load
Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Supply voltage for full short circuit protection Tj Start=-40 ...+150C Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3)= 2 , RL= 5.3 , td= 200 ms, IN= low or high Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C, TC = 150C const. IL = 2.3 A, ZL = 98 mH, 0 : Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Symbol Vbb Vbb VLoad dump4) IL Tj Tstg Ptot EAS VESD VIN IIN IST
Values 43 34 60 self-limited -40 ...+150 -55 ...+150 18 335 1.0 2.0 -10 ... +16 2.0 5.0
Unit V V V A C W mJ kV V mA
Input voltage (DC) Current through input pin (DC) Current through status pin (DC)
see internal circuit diagrams page 6
Thermal Characteristics
Parameter and Conditions Thermal resistance Symbol min --Values typ max -7 -75 39 Unit K/W
chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB5):
2)
3) 4) 5)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air.
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BTS409L1 Electrical Characteristics
Parameter and Conditions
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 1.8 A Tj=25 C: RON -1.8 IL(ISO) IL(GNDhigh) -160 320 2.3 -200 400 -10 A mA s m
Tj=150 C: Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 C Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7 Turn-on time IN to 90% VOUT: Turn-off time IN to 10% VOUT: RL = 12 , Tj =-40...+150C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150C Operating Parameters Operating voltage6) Undervoltage shutdown Undervoltage restart Tj =-40...+150C: Tj =-40...+150C: Tj =-40...+25C: Tj =+150C: Undervoltage restart of charge pump see diagram page 12 Tj =-40...+150C: Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis Tj =-40...+150C: Overvoltage protection7) Tj =-40...+150C: Ibb=40 mA Standby current (pin 3) VIN=0 Tj=-40...+25C: Tj= 150C: Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 1)8), VIN=5 V, Tj =-40...+150C
6) 7)
ton toff dV /dton -dV/dtoff
80 80 0.1 0.1
200 200 ---
400 400 1 1
V/s V/s
Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) Vbb(under) Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ)
5.0 3.5 ---34 33 -42
---5.6 0.2 --0.5 47
34 5.0 5.0 7.0 7.0 -43 ----
V V V V V V V V V
Ibb(off) IL(off) IGND
-----
10 12 -1.8
23 28 12 3.5
A A mA
At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V See also VON(CL) in table of protection functions and circuit diagram page 7.
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BTS409L1
Parameter and Conditions
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Protection Functions9) Initial peak short circuit current limit (pin 3 to 5) Tj =-40C: Tj =25C: Tj =+150C: Repetitive short circuit shutdown current limit Tj = Tjt (see timing diagrams, page 10) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 10) Diagnostic Characteristics Open load detection current
(on-condition)
IL(SCp) 5.5 4.5 3 IL(SCr) -VON(CL) Tjt 41 150 --4 47 -10 --53 --32 A V C K V 9.5 7.5 5 13 11 7 A
Tjt
-Vbb
Tj=-40 C: IL (OL) Tj=25 ..150C:
10 10 2
--3
200 150 4
mA V
Open load detection voltage11) (off-condition) VOUT(OL) Tj=-40..150C: Internal output pull down (pin 5 to 1), VOUT=5 V, Tj=-40..150C RO
4
10
30
k
8) 9)
Add IST, if IST > 0, add IIN, if VIN>5.5 V Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 10) Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). 11) External pull up resistor required for open load detection in off state.
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BTS409L1
Parameter and Conditions
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Input and Status Feedback12) Input resistance see circuit page 6 Input turn-on threshold voltage Tj =-40..+150C: Input turn-off threshold voltage Tj =-40..+150C: Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V, Tj =-40..+150C On state input current (pin 2), VIN = 3.5 V, Tj =-40..+150C Delay time for status with open load after switch off (see timing diagrams, page 11), Tj =-40..+150C Status invalid after positive input slope (open load) Tj=-40 ... +150C: Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: ST low voltage Tj =-40...+25C, IST = +1.6 mA: Tj = +150C, IST = +1.6 mA:
RI VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on) td(ST OL4) td(ST)
2.5 1.7 1.5 -1 20 100 --
3.5 --0.5 -50 400 250
6 3.5 --50 90 800 600
k V V V A A s s
VST(high) VST(low)
5.4 ---
6.1 ---
-0.4 0.6
V
12)
If a ground resistor RGND is used, add the voltage drop across this resistor.
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BTS409L1 Truth Table
Inputlevel Normal operation Open load Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level L H L H L H L H L H L H Output level L H
13)
Status
H H H L L L L L L
H H H (L14)) L L15) H (L16)) H L H H H H
X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 11...12)
Terms
Ibb I IN 2 I ST V V bb IN VST 4 ST GND 1 R GND IGND VOUT IN 3 Vbb IL PROFET OUT 5 VON
Input circuit (ESD protection)
R IN I
ESD-ZD I GND
I
I
ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).
13) 14)
Power Transistor off, high impedance with external resistor between pin 3 and pin 5 15) An external short of output to V , in the off state, causes an internal current from output to ground. If R bb GND is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious. 16) Low resistance to V may be detected in ON-state by the no-load-detection bb
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BTS409L1
Status output
+5V
Open-load detection
ON-state diagnostic condition: VON < RON * IL(OL); IN high
+ V bb
R ST(ON)
ST
GND
ESDZD
ON
VON
ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 380 at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).
OUT
Logic unit
Open load detection
Inductive and overvoltage output clamp
+ V bb V Z
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
R
EXT
V
ON
OFF
V OUT
OUT GND
PROFET
Logic unit Open load detection
R O
VON clamped to 47 V typ.
Signal GND
Overvolt. and reverse batt. protection
+ V bb V
GND disconnect
3
R IN
IN
RI Logic
Z2
R ST ST
V Z1
2
IN
Vbb PROFET OUT
PROFET
GND
5
4 V bb V IN V ST
ST GND 1 V GND
R GND
Signal GND
VZ1 = 6.2 V typ., VZ2 = 47 V typ., RGND = 150 , RST= 15 k, RI= 3.5 k typ.
Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available.
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BTS409L1
GND disconnect with GND pull up
3 IN Vbb PROFET 4 ST GND 1 V V bb V IN ST V OUT
Inductive Load switch-off energy dissipation
E bb E AS Vbb PROFET OUT EL ELoad
2
5
IN
=
GND
ST GND ZL
{
L RL
ER
Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available.
Vbb disconnect with energized inductive load
3 high 2 IN Vbb PROFET 4 ST GND 1 V OUT
Energy stored in load inductance: EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)*iL(t) dt,
2
5
with an approximate solution for RL > 0 : EAS= IL* L IL*RL *(V + |VOUT(CL)|)* ln (1+ ) |VOUT(CL)| 2*RL bb
bb
Maximum allowable load inductance for a single switch off
L = f (IL ); Tj,start = 150C,TC = 150C const., Vbb = 12 V, RL = 0 L [mH] 10000
Normal load current can be handled by the PROFET itself.
Vbb disconnect with charged external inductive load
S high 2 IN 3 Vbb PROFET 4 ST GND 1 V OUT
1000
5
D
100
bb
10
If other external inductive loads L are connected to the PROFET, additional elements like D are necessary.
1 1 2 3 4 5
IL [A]
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2003-Oct-01
BTS409L1
Transient thermal impedance chip case ZthJC = f(tp)ZthJC [K/W] 10
1
0.1
D= 0.5 0.2 0.1 0.05 0.02 0.01 0
0.01
1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 1E2
tp [s]
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BTS409L1
Timing diagrams
Figure 1a: Vbb turn on: Figure 2b: Switching an inductive load
IN IN V bb ST
*)
t
d(ST)
V
OUT
V
OUT
ST open drain t
proper turn on under all conditions
IL I L(OL) t
*) if the time constant of load is too large, open-load-status may occur
Figure 2a: Switching a lamp,
IN
Figure 3a: Short circuit shut down by overtempertature, reset by cooling
IN
ST IL V
OUT
I L(SCp) IL(SCr)
I
L
t
ST
t
Heating up may require several milliseconds, depending on external conditions
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BTS409L1
Figure 4a: Overtemperature: Reset if Tj IN
IN
ST
ST
t d(ST OL1)
t
d(ST OL2)
V
OUT
V
OUT
T
J
I
normal
L
open
normal
t
td(ST OL1) = 30 s typ., td(ST OL2) = 20 s typ
t
Figure 5a: Open load: detection in ON-state, turn on/off to open load
Figure 5c: Open load: detection in ON- and OFF-state (with REXT), turn on/off to open load
IN
IN
ST
t d(ST)
t
d(ST OL4)
ST
t
d(ST)
V
OUT
V
OUT
I
L
I open t
L
open t
The status delay time td(ST OL4) allows to ditinguish between the failure modes "open load" and "overtemperature".
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BTS409L1
Figure 6a: Undervoltage: Figure 7a: Overvoltage:
IN
IN
V
bb V
bb(under)
Vbb Vbb(u cp) V
bb(u rst)
V ON(CL)
Vbb(over)
V bb(o rst)
V V OUT
OUT
ST open drain t
ST
t
Figure 6b: Undervoltage restart of charge pump
V on VON(CL)
on-state
off-state
V
bb(over)
V
bb(u rst)
V
bb(o rst)
V V
bb(under)
bb(u cp)
off-state
V bb
charge pump starts at Vbb(ucp) =5.6 V typ.
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BTS409L1
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/5
BTS409L1
Ordering code Q67060-S6107-A2
SMD TO-220AB/5, Opt. E3062 Ordering code
BTS409L1 E3062A T&R: Q67060-S6107-A4
TO-220AB/5, Option E3043 Ordering code
BTS409L1 E3043 Q67060-S6107-A3
Changed since 04.96 Date Change Dec Zth Specification added 1996 td(ST OL4) max reduced from 1500 to 800s ESD capability increased EAS maximum rating and diagram added 2000 Company Name
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BTS409L1
Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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